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| NPN Silicon Darlington Transistors PZTA 13 PZTA 14 For general AF applications q High collector current q High current gain q Complementary types: PZTA 63 PZTA 64 (PNP) q Type PZTA 13 PZTA 14 Marking PZTA 13 PZTA 14 Ordering Code (tape and reel) Q62702-Z2033 Q62702-Z2034 Pin Configuration 1 2 3 4 B C E C Package1) SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS Symbol VCES VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg Values 30 30 10 300 500 100 200 1.5 150 - 65 ... + 150 Unit V mA W C 72 17 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 PZTA 13 PZTA 14 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 100 A Collector-base breakdown voltage IC = 100 A, IB = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector-base cutoff current VCE = 30 V, IE = 0 VCE = 30 V, IE = 0, TA = 150 C Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V PZTA 13 PZTA 14 PZTA 13 PZTA 14 VCEsat VBEsat V(BR)CES V(BR)CB0 V(BR)EB0 ICB0 - - IEB0 hFE 5000 10000 10000 20000 - - - - - - - - - - - - 1.5 2.0 V - - - - 100 10 100 nA A Values typ. max. Unit 30 30 10 - - - - - - V nA - Collector-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA Base-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA AC characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz fT 125 - - MHz 1) Pulse test conditions: t 300 s, D = 2 %. Semiconductor Group 2 PZTA 13 PZTA 14 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Transition frequency fT = f (IC) VCE = 5 V, f = 100 MHz Collector cutoff current ICB0 = f (TA) VCE = 30 V DC current gain hFE = f (IC) VCE = 5 V Semiconductor Group 3 PZTA 13 PZTA 14 Collector-emitter saturation voltage IC = f (VCE sat) hFE = 1000 Base-emitter saturation voltage IC = f (VBE sat) hFE = 1000 Permissible pulse load Ptot max / Ptot DC = f (tp) Semiconductor Group 4 |
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